多晶硅太陽(yáng)能電池 畢業(yè)論文文獻(xiàn)翻譯 中英文對(duì)照

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1、無(wú) 錫 職 業(yè) 技 術(shù) 學(xué) 院 畢業(yè)設(shè)計(jì)說(shuō)明書(shū)（英文翻譯） 英 文 翻 譯 Polycrystalline silicon solar cells As we all know, solar energy has many advantages, photovoltaic power generation will provide the main energy of mankind, but at present it, to make solar power a large market, is the general consumer acceptance,

2、increased solar cell efficiency and reduce production costs should be our overriding goal, from the current development of the international solar cell can see the trend of its silicon, polycrystalline silicon, ribbon silicon, thin film materials (including trend of its silicon, polycrystalline sili

3、con, ribbon silicon, thin film materials (including microcrystalline silicon thin films, compound-based thin film and dye film). 從工業(yè)化發(fā)展來(lái)看，重心已由單晶向多晶方向發(fā)展，主要原因?yàn)?；[1]可供應(yīng)太陽(yáng)電池的頭尾料愈來(lái)愈少；[2]對(duì)太陽(yáng)電池來(lái)講，方形基片更合算，通過(guò)澆鑄法和直接凝固法所獲得的多晶硅可直接獲得方形材料；[3]多晶硅的生產(chǎn)工藝不斷取得進(jìn)展，全自動(dòng)澆鑄爐每生產(chǎn)周期（50小時(shí)）可生產(chǎn)200公斤以上的硅錠，晶粒的尺寸達(dá)到厘米級(jí)；[4]由于近十年單晶硅工藝的研究

4、與發(fā)展很快，其中工藝也被應(yīng)用于多晶硅電池的生產(chǎn)，例如選擇腐蝕發(fā)射結(jié)、背表面場(chǎng)、腐蝕絨面、表面和體鈍化、細(xì)金屬柵電極，采用絲網(wǎng)印刷技術(shù)可使柵電極的寬度降低到50微米，高度達(dá)到15微米以上，快速熱退火技術(shù)用于多晶硅的生產(chǎn)可大大縮短工藝時(shí)間，單片熱工序時(shí)間可在一分鐘之內(nèi)完成，采用該工藝在100平方厘米的多晶硅片上作出的電池轉(zhuǎn)換效率超過(guò)14％。 From industrial development, it has been the focus of the direction of single crystal to polycrystalline, mainly due to; （1） th

5、e beginning and end of solar cell materials can supply less and less; （2） in terms of the solar cell, a square substrate is more cost-effective, by direct coagulation casting method and obtained direct access to a square polysilicon materials; （3） of polysilicon production technology continue to

6、 make progress, casting furnace automatic production cycle of each (50 hours) can produce over 200 kg ingots, grain size to achieve centimeter level; （4） in recent years as research and development of silicon technology quickly, in which technology has been applied to the production of polycrystal

7、line silicon cells, such as selective etching the emitter, back surface field, corrosion suede , surface and bulk passivation, thin metal gate electrode, using screen-printing technology enables the gate electrode width down to 50 microns to 15 microns high, rapid thermal annealing technology for po

8、lysilicon production process can significantly shorten the time, single time of thermal process can be completed within a minute using this technology in the 100 square centimeters of silicon chip to make the cell conversion efficiency of over 14%. 據(jù)報(bào)道，目前在50～60微米多晶硅襯底上制作的電池效率超過(guò)16％。It was reported in

9、 50 to 60 micron silicon substrate produced more than 16% cell efficiency. 利用機(jī)械刻槽、絲網(wǎng)印刷技術(shù)在100平方厘米多晶上效率超過(guò)17％，無(wú)機(jī)械刻槽在同樣面積上效率達(dá)到16％，采用埋柵結(jié)構(gòu)，機(jī)械刻槽在130平方厘米的多晶上電池效率達(dá)到15.8％。 Mechanical groove, screen printing technology in polycrystalline on the efficiency of more than 17%, no mechanical groove in the same ar

10、ea on the efficiency of 16%, with buried gate structure, mechanical groove 130 on a square centimeter of polycrystalline cell efficiency of 15.8%. The following two aspects of the polysilicon to discuss battery technology. Laboratory efficient battery technology Laboratory techniques often do not

11、consider the cost of battery production and mass production can only achieve maximum efficiency of the method and means to provide specific materials and processes that can achieve the limit. 1. On the absorption of light For the optical absorption is mainly: (1) reduce the surface reflection; (

12、2) Change the path of light in the cell body; (3) using the back reflection. For silicon, anisotropic chemical etching method applied in (100) surface produced textured pyramid-shaped, lower surface light reflection. 但多晶硅晶向偏離（100）面，采用上面的方法無(wú)法作出均勻的絨面，目前采用下列方法:But silicon crystal to deviate from the

13、(100) surface, using the above methods can not make even the suede, the current use of the following methods: （1） laser groove Groove with a laser method can be produced in the polysilicon surface, inverted pyramid structure, in 500~900nm wavelength range, reflectance was 4 to 6%, with double-laye

14、r antireflection coating surface produced considerable. 而在（100）面單晶硅化學(xué)制作絨面的反射率為11％。In the (100) reflection of silicon chemical production rate of 11% of the flock. 用激光制作絨面比在光滑面鍍雙層減反射膜層（ZnS/MgF2）電池的短路電流要提高4％左右，這主要是長(zhǎng)波光（波長(zhǎng)大于800nm）斜射進(jìn)入電池的原因Produced by laser textured surface than in the smooth double-laye

15、r antireflection coating film (ZnS/MgF2) short circuit current to increase by about 4%, mainly long-wave light (wavelength greater than 800nm) the reasons for slanting into the battery. 激光制作絨面存在的問(wèn)題是在刻蝕中，表面造成損傷同時(shí)引入一些雜質(zhì)，要通過(guò)化學(xué)處理去除表面損傷層。Laser production of suede problems in etching, surface damage cause

16、d by the introduction of a number of impurities at the same time, through chemical treatment to remove surface damage layer. 該方法所作的太陽(yáng)電池通常短路電流較高，但開(kāi)路電壓不太高，主要原因是電池表面積增加，引起復(fù)合電流提高。Solar cells made by this method are usually higher short circuit current, open circuit voltage is not high, mainly due to cel

17、l surface area increased, the recombination current increase. （2） Chemical groove Application of mask (Si3N4 or SiO2) isotropic corrosion, etching solutions for acid etching solutions, but also for the higher concentration of sodium hydroxide or potassium hydroxide solution, the method can not cre

18、ate the kind formed by anisotropic etching cone-like structure. 據(jù)報(bào)道，該方法所形成的絨面對(duì)700～1030微米光譜范圍有明顯的減反射作用。According to reports, the approach down the face of the formation of micron spectral range 700 to 1030 significantly reduced reflex. 但掩膜層一般要在較高的溫度下形成，引起多晶硅材料性能下降，特別對(duì)質(zhì)量較低的多晶材料，少子壽命縮短。But the mask lay

19、er will be formed at higher temperatures, causing decreased performance polysilicon materials, especially for lower quality polycrystalline materials, reduce the minority carrier lifetime. 應(yīng)用該工藝在225cm2的多晶硅上所作電池的轉(zhuǎn)換效率達(dá)到16.4%。Application of the technology made of polysilicon in cell conversion efficien

20、cy of 16.4%. 掩膜層也可用絲網(wǎng)印刷的方法形成。Mask layer screen printing method can also be formed. （3） reactive ion corrosion (RIE) This method is a non-mask etching process, the formation of suede particularly low reflectivity in the spectral range 450 to 1000 micron reflectivity can be less than 2%. 僅從光學(xué)的角度來(lái)看，是

21、一種理想的方法，但存在的問(wèn)題是硅表面損傷嚴(yán)重，電池的開(kāi)路電壓和填充因子出現(xiàn)下降。Only from the optical point of view, is an ideal method, but problem is serious silicon surface damage, the battery open circuit voltage and fill factor decreased. （4） produced antireflection film For efficient solar cells, the most common and most effective

22、 way is to double-layer antireflection coatings deposited ZnS/MgF2, its optimal thickness depends on the thickness of the oxide layer below the surface characteristics and battery, for example, the surface is smooth or textured surface，anti-reflection technology has evaporated Ta2O5, PECVD depositio

23、n Si3N3 so. ZnO導(dǎo)電膜也可作為減反材料。ZnO conductive film can be used as anti-reflective material. 2. Metallization In the efficient production of the battery, the metal electrode to the battery design parameters such as surface doping concentration, PN junction depth, the metal material to match. 實(shí)驗(yàn)室電池一般面積比

24、較小（面積小于4cm2），所以需要細(xì)金屬柵線（小于10微米），一般采用的方法為光刻、電子束蒸發(fā)、電子鍍。General area of small laboratory cell (area less than 4cm2), so they need small metal gate line (less than 10 microns), the general approach to lithography, electron beam evaporation, e-coating.Large-scale production of industrial plating process i

25、s also used, but the combination of evaporation and lithography, do not belong to low-cost technology. 3. PN junction formation technology （1） emitter formation and phosphorus gettering For efficient solar cells, emitter diffusion formation of choice commonly used in the formation of heavy metal

26、impurities in the region below the electrode in the spread between the electrodes to achieve light levels, the shallow emitter diffusion is increased concentration of cell response to blue light, and also allows silicon surface easily passivated. 擴(kuò)散的方法有兩步擴(kuò)散工藝、擴(kuò)散加腐蝕工藝和掩埋擴(kuò)散工藝。Two-step diffusion method

27、 diffusion process, diffusion process and increase corrosion buried diffusion process. 目前采用選擇擴(kuò)散，1515cm2電池轉(zhuǎn)換效率達(dá)到16.4%，n++、n+區(qū)域的表面方塊電阻分別為20Ω和80Ω.Currently used selection proliferation, 15 15 cell conversion efficiency of 16.4%, n + +, n + sheet resistance of the surface region were 20Ω and 80Ω. For

28、Mc-Si materials, expansion of phosphorus gettering effect on the battery has been widely studied, a longer period of phosphorus gettering process (usually 3 to 4 hours), make some of Mc-Si of the minority carrier diffusion length increase of two orders of magnitude. （2） the formation of back surfac

29、e field and aluminum gettering In Mc-Si cell, the back p + p junction by the formation of uniform diffusion of aluminum or boron, boron source is generally BN, BBr, APCVD SiO2: B2O8 such as evaporation or diffusion of aluminum screen printing of aluminum, 800 degrees completed sintering , on the ro

30、le of aluminum gettering carried out extensive research, and in different phosphorus diffusion gettering, aluminum gettering at a relatively low temperature. 其中體缺陷也參與了雜質(zhì)的溶解和沉積，而在較高溫度下，沉積的雜質(zhì)易于溶解進(jìn)入硅中，對(duì)Mc—Si產(chǎn)生不利的影響。Physical defects which also involved the dissolution and deposition of impurities, while

31、 in higher temperatures, the deposition of impurities easily dissolve into the silicon, on the Mc-Si have a negative impact. 到目前為至，區(qū)域背場(chǎng)已應(yīng)用于單晶硅電池工藝中，但在多晶硅中，還是應(yīng)用全鋁背表面場(chǎng)結(jié)構(gòu)。Far, to the regional background field has been applied to silicon solar cell technology, but in the polysilicon, the application of

32、aluminum or the back surface field structure. （3） Double Mc-Si cells Mc-Si double the battery positive side for the conventional structure, on the back for the N + and P + cross-cutting structure, so that generated a positive light, but in the back of the photo birth rate near the back electrode c

33、an be effectively absorbed. 背電極作為對(duì)正面電極的有效補(bǔ)充，也作為一個(gè)獨(dú)立的栽流子收集器對(duì)背面光照和散射光產(chǎn)生作用，據(jù)報(bào)道，在AM1.5條件下，轉(zhuǎn)換效率超過(guò)19％。 Back electrode as an effective complement to the positive electrode, also planted as an independent flow of sub-collector on the back of the light and the scattered light to be effective, it was reported

34、 in the AM1.5 conditions, the conversion efficiency of over 19%.360畢業(yè)設(shè)計(jì)網(wǎng) 4. Surface and bulk passivation For Mc-Si, due to higher grain boundary exist, point defects (vacancies, interstitial atoms, metal impurities, oxygen and nitrogen and their compounds) and in vivo defect on the surface passiv

35、ation is particularly important, in addition to the previously mentioned The gettering, the passivation process has a number of ways, by thermal oxidation to silicon dangling bonds saturated is a relatively common method, make Si-SiO2 interface recombination velocity greatly decreased, the passivati

36、on effect depends on the launching area surface concentration, the interface state density and the electron and hole cross sections were floating. 在氫氣氛中退火可使鈍化效果更加明顯。Annealed in hydrogen atmosphere can passivation effect is more obvious. 采用PECVD淀積氮化硅近期正面十分有效，因?yàn)樵诔赡さ倪^(guò)程中具有加氫的效Nitride deposited by PECVD

37、the recent positive is very effective because the process of film has the effect of hydrogenation. 該工藝也可應(yīng)用于規(guī)模化生產(chǎn)中。 The process can also be applied to large scale production. 應(yīng)用Remote PECVD Si3N4可使表面復(fù)合速度小于20cm/s。 Application of Remote PECVD Si3N4 surface recombination velocity is less than can 20cm /

38、 s. 多晶硅太陽(yáng)能電池 眾所周知，利用太陽(yáng)能有許多優(yōu)點(diǎn)，光伏發(fā)電將為人類提供主要的能源，但目前來(lái)講，要使太陽(yáng)能發(fā)電具有較大的市場(chǎng)，被廣大的消費(fèi)者接受，提高太陽(yáng)電池的光電轉(zhuǎn)換效率，降低生產(chǎn)成本應(yīng)該是我們追求的最大目標(biāo)，從目前國(guó)際太陽(yáng)電池的發(fā)展過(guò)程可以看出其發(fā)展趨勢(shì)為單晶硅、多晶硅、帶狀硅、薄膜材料（包括微晶硅基薄膜、化合物基薄膜及染料薄膜）。從工業(yè)化發(fā)展來(lái)看，重心已由單晶向多晶方向發(fā)展，主要原因?yàn)?；?）可供應(yīng)太陽(yáng)電池的頭尾料愈來(lái)愈少；（2） 對(duì)太陽(yáng)電池來(lái)

39、講，方形基片更合算，通過(guò)澆鑄法和直接凝固法所獲得的多晶硅可直接獲得方形材料；（3）多晶硅的生產(chǎn)工藝不斷取得進(jìn)展，全自動(dòng)澆鑄爐每生產(chǎn)周期（50小時(shí)）可生產(chǎn)200公斤以上的硅錠，晶粒的尺寸達(dá)到厘米級(jí)；（4）由于近十年單晶硅工藝的研究與發(fā)展很快，其中工藝也被應(yīng)用于多晶硅電池的生產(chǎn)，例如選擇腐蝕發(fā)射結(jié)、背表面場(chǎng)、腐蝕絨面、表面和體鈍化、細(xì)金屬柵電極，采用絲網(wǎng)印刷技術(shù)可使柵電極的寬度降低到50微米，高度達(dá)到15微米以上，快速熱退火技術(shù)用于多晶硅的生產(chǎn)可大大縮短工藝時(shí)間，單片熱工序時(shí)間可在一分鐘之內(nèi)完成，采用該工藝在100平方厘米的多晶硅片上作出的電池轉(zhuǎn)換效率超過(guò)14％。據(jù)報(bào)道，目前在50～60微米多晶硅

40、襯底上制作的電池效率超過(guò)16％。利用機(jī)械刻槽、絲網(wǎng)印刷技術(shù)在100平方厘米多晶上效率超過(guò)17％，無(wú)機(jī)械刻槽在同樣面積上效率達(dá)到16％，采用埋柵結(jié)構(gòu)，機(jī)械刻槽在130平方厘米的多晶上電池效率達(dá)到15.8％。 下面從兩個(gè)方面對(duì)多晶硅電池的工藝技術(shù)進(jìn)行討論。 實(shí)驗(yàn)室高效電池工藝 實(shí)驗(yàn)室技術(shù)通常不考慮電池制作的成本和是否可以大規(guī)?；a(chǎn)，僅僅研究達(dá)到最高效率的方法和途徑，提供特定材料和工藝所能夠達(dá)到的極限。 1.關(guān)于光的吸收 對(duì)于光吸收主要是： （1）降低表面反射； （2）改變光在電池體內(nèi)的路徑； （3）采用背面反射。 對(duì)于單晶硅，應(yīng)用各向異性化學(xué)腐蝕的方法可在（100）表面制作金

41、字塔狀的絨面結(jié)構(gòu)，降低表面光反射。但多晶硅晶向偏離（100）面，采用上面的方法無(wú)法作出均勻的絨面，目前采用下列方法: （1）激光刻槽 用激光刻槽的方法可在多晶硅表面制作倒金字塔結(jié)構(gòu)，在500～900nm光譜范圍內(nèi)，反射率為4～6％，與表面制作雙層減反射膜相當(dāng)。而在（100）面單晶硅化學(xué)制作絨面的反射率為11％。用激光制作絨面比在光滑面鍍雙層減反射膜層（ZnS/MgF2）電池的短路電流要提高4％左右，這主要是長(zhǎng)波光（波長(zhǎng)大于800nm）斜射進(jìn)入電池的原因。激光制作絨面存在的問(wèn)題是在刻蝕中，表面造成損傷同時(shí)引入一些雜質(zhì)，要通過(guò)化學(xué)處理去除表面損傷層。該方法所作的太陽(yáng)電池通常短路電流較高，但開(kāi)路

42、電壓不太高，主要原因是電池表面積增加，引起復(fù)合電流提高。 （2）化學(xué)刻槽 應(yīng)用掩膜（Si3N4或SiO2）各向同性腐蝕，腐蝕液可為酸性腐蝕液，也可為濃度較高的氫氧化鈉或氫氧化鉀溶液，該方法無(wú)法形成各向異性腐蝕所形成的那種尖錐狀結(jié)構(gòu)。據(jù)報(bào)道，該方法所形成的絨面對(duì)700～1030微米光譜范圍有明顯的減反射作用。但掩膜層一般要在較高的溫度下形成，引起多晶硅材料性能下降，特別對(duì)質(zhì)量較低的多晶材料，少子壽命縮短。應(yīng)用該工藝在225平方米的多晶硅上所作電池的轉(zhuǎn)換效率達(dá)到16.4%。掩膜層也可用絲網(wǎng)印刷的方法形成。 （3）反應(yīng)離子腐蝕（RIE） 該方法為一種無(wú)掩膜腐蝕工藝，所形成的絨面反射率特別低，

43、在450～1000微米光譜范圍的反射率可小于2％。僅從光學(xué)的角度來(lái)看，是一種理想的方法，但存在的問(wèn)題是硅表面損傷嚴(yán)重，電池的開(kāi)路電壓和填充因子出現(xiàn)下降。 （4）制作減反射膜層 對(duì)于高效太陽(yáng)電池，最常用和最有效的方法是蒸鍍ZnS/MgF2雙層減反射膜，其最佳厚度取決于下面氧化層的厚度和電池表面的特征，例如，表面是光滑面還是絨面，減反射工藝也有蒸鍍Ta2O5, PECVD沉積 Si3N3等。ZnO導(dǎo)電膜也可作為減反材料。 2.金屬化技術(shù) 在高效電池的制作中，金屬化電極必須與電池的設(shè)計(jì)參數(shù)，如表面摻雜濃度、PN結(jié)深，金屬材料相匹配。實(shí)驗(yàn)室電池一般面積比較?。娣e小于4平方厘米），所以需要細(xì)金

44、屬柵線（小于10微米），一般采用的方法為光刻、電子束蒸發(fā)、電子鍍。工業(yè)化大生產(chǎn)中也使用電鍍工藝，但蒸發(fā)和光刻結(jié)合使用時(shí)，不屬于低成本工藝技術(shù)。 3.PN結(jié)的形成技術(shù) （1）發(fā)射區(qū)形成和磷吸雜 對(duì)于高效太陽(yáng)能電池，發(fā)射區(qū)的形成一般采用選擇擴(kuò)散，在金屬電極下方形成重雜質(zhì)區(qū)域而在電極間實(shí)現(xiàn)淺濃度擴(kuò)散，發(fā)射區(qū)的淺濃度擴(kuò)散即增強(qiáng)了電池對(duì)藍(lán)光的響應(yīng)，又使硅表面易于鈍化。擴(kuò)散的方法有兩步擴(kuò)散工藝、擴(kuò)散加腐蝕工藝和掩埋擴(kuò)散工藝。目前采用選擇擴(kuò)散，電池轉(zhuǎn)換效率達(dá)到16.4%，n++、n+區(qū)域的表面方塊電阻分別為20Ω和80Ω. 對(duì)于Mc—Si材料，擴(kuò)磷吸雜對(duì)電池的影響得到廣泛的研究，較長(zhǎng)時(shí)間的磷吸雜過(guò)程

45、（一般3～4小時(shí)），可使一些Mc—Si的少子擴(kuò)散長(zhǎng)度提高兩個(gè)數(shù)量級(jí)。在對(duì)襯底濃度對(duì)吸雜效應(yīng)的研究中發(fā)現(xiàn)，即便對(duì)高濃度的襯第材料，經(jīng)吸雜也能夠獲得較大的少子擴(kuò)散長(zhǎng)度（大于200微米），電池的開(kāi)路電壓大于638mv, 轉(zhuǎn)換效率超過(guò)17％。 （2）背表面場(chǎng)的形成及鋁吸雜技術(shù) 在Mc—Si電池中，背p+p結(jié)由均勻擴(kuò)散鋁或硼形成，硼源一般為BN、BBr、APCVD SiO2：B2O8等，鋁擴(kuò)散為蒸發(fā)或絲網(wǎng)印刷鋁，800度下燒結(jié)所完成，對(duì)鋁吸雜的作用也開(kāi)展了大量的研究，與磷擴(kuò)散吸雜不同，鋁吸雜在相對(duì)較低的溫度下進(jìn)行。其中體缺陷也參與了雜質(zhì)的溶解和沉積，而在較高溫度下，沉積的雜質(zhì)易于溶解進(jìn)入硅中，對(duì)Mc

46、—Si產(chǎn)生不利的影響。到目前為至，區(qū)域背場(chǎng)已應(yīng)用于單晶硅電池工藝中，但在多晶硅中，還是應(yīng)用全鋁背表面場(chǎng)結(jié)構(gòu)。 （3）雙面Mc—Si電池 Mc—Si雙面電池其正面為常規(guī)結(jié)構(gòu)，背面為N＋和P＋相互交叉的結(jié)構(gòu)，這樣，正面光照產(chǎn)生的但位于背面附近的光生少子可由背電極有效吸收。背電極作為對(duì)正面電極的有效補(bǔ)充，也作為一個(gè)獨(dú)立的栽流子收集器對(duì)背面光照和散射光產(chǎn)生作用，據(jù)報(bào)道，在AM1.5條件下，轉(zhuǎn)換效率超過(guò)19％。 4. 表面和體鈍化技術(shù) 對(duì)于Mc—Si，因存在較高的晶界、點(diǎn)缺陷（空位、填隙原子、金屬雜質(zhì)、氧、氮及他們的復(fù)合物）對(duì)材料表面和體內(nèi)缺陷的鈍化尤為重要，除前面提到的吸雜技術(shù)外，鈍化工藝有多種方法，通過(guò)熱氧化使硅懸掛鍵飽和是一種比較常用的方法，可使Si-SiO2界面的復(fù)合速度大大下降，其鈍化效果取決于發(fā)射區(qū)的表面濃度、界面態(tài)密度和電子、空穴的浮獲截面。在氫氣氛中退火可使鈍化效果更加明顯。采用PECVD淀積氮化硅近期正面十分有效，因?yàn)樵诔赡さ倪^(guò)程中具有加氫的效果。該工藝也可應(yīng)用于規(guī)?；a(chǎn)中。應(yīng)用Remote PECVD Si3N4可使表面復(fù)合速度小于20cm/s。 - 8 -