地面打磨機(jī)的設(shè)計(jì)

地面打磨機(jī)的設(shè)計(jì),地面,打磨,設(shè)計(jì) STUDIES OF SURFACE GRINDING TEMPERATURE AFFECTED BY DIFFERENT GRINDING WAYS OF SILICON WAFER Abstract: The surface g grinding temperature o f the silicon wafer ground by diamond w heels is studied. Rudimentally, the properties o f the surface grinding temperature generated by two grinding methods, ground by straight and cup wheels respectively , are analyzed. In addition, considering the effects o f grain size and grinding depth on surface grinding temperature during these two grinding processes, significant results and conclusions are obtained from experimental research. Keywords: surface grinding temperature, straight wheel, cup wheel, silicon wafer The machining technique of silicon wafers has gradually become one o f the progressive projects in recent years. With the successful production of large size silicon wafers, researchers all over the world have paid more at tention to the machining techniques of silicon wafers 　　According to the ductile grinding principle of brittle materials, remarkable developments have been achieved to make the precision machining of large size silicon wafers become true by adopting the cup wheel surface grinding technique, which is a high efficiency precision machining way and has wide application in hard-brittle material machining fields. To prevent the silicon wafer from burning , the research work of surface grinding temperature should not be ignored. Most of the former research works of surface grinding temperature focused on the straight wheel grinding process mainly . In the difference between these two machining principles, there are some distinct ions in surface grinding temperature, so it is necessary to understand the difference of surface grinding temperature between the cup wheel grinding and the straight wheel grinding processes. At the same time, the relevant research work is meaningful to the application of the cup wheel grinding technique. 1.Comparison of Surface Grinding Techniques between Cup Wheel and Straight Wheel 　　Fig. 1 shows the surface grinding method with a straight wheel. The contact length between the w heel and the workpiece, which is closely related to grinding directions and grinding depth, is variable with grinding parameters and has significant influence on grinding heat . The intensity of the heat source will change with the contact length. Fig. 1　Shape of grinding zone with straight wheel 　　Fig. 2 show s the surface grinding process with a cup wheel. The contact length between the wheel and the workpiece has little relation with grinding directions and grinding depth. For a given wheel , the contact length keeps constant within a certain rang e of grinding depths. As the cause of the moving heat source is regarded as a linear source based on the traditional grinding heat theory , hence, this theory does not suit the cup wheel grinding process for its grinding zone is an arc instead o f rectangle. Therefore, the grinding heat model for the cup wheel should be set up to meet the needs of this technology. Fig. 2　Shape of grinding area with cup wheel 2.Experimental Method, Apparatus and Conditions 2. 1　Experimental method 　　T he surface grinding temperature is measured with a thermocouple. Two pieces o f thin thermocouple slices of 0. 1mm thickness, made of standard thermocouple wires, are clamped between two parts of the workpiece and are insulated from the workpiece. When the wheel grinds the surface of the workpiece, the two slices，end points on the workpiece surface can be welded together as a node. Due to the small volume of this node, heat capacity is small enough. If the amplifying and recording instrument s react quickly enough, the response time is extremely short . The real grinding temperature can be measured accurately without further deductive computing . 2. 2　Apparatus 　　Fig. 3 shows the experiment system. The thermocouple wires out of the workpiece are connected with a DC amplifier which enlarges the thermic signals 100 to 1 000 times. The signals are analyzed by a digital real-time oscilloscope, and recorded by a computer. The minute grinding depth is performed in 0. 1 um per step by a micro-feed system which is manufactured by our own laboratory. T he feed principle is shown in Fig . 3.The computer pro vides accurate digital signals to the amplifier. The amplified signal is transmit ted into a piezoquartz to perform micro-feed. Fig. 3　Principle of measurement system 2. 3　Experimental conditions 　　T ab. 1 show s the experimental conditions by a straight wheel, while Tab. 2 by a cup wheel . Tab. 1 Equipment and parameters of surface grinding with a straight wheel Grinding machine HZ-63 horizontal surface grinder Grinding w heel resin bonded diamond shape: straight Φ300 mm×25 mm　240# , W10 Workpiece single crystal silicon 25 mm×10 mm×5 mm Grinding fluid no Tab. 2　Equipment and parameters of surface grinding with a cup wheel Grinding machine CG6125A lathe Grinding w heel resin bonded diamond shape: cup outer diameter: Φ100 mm internal diameter : Φ90 mm abrasive size: 120# ,W28, W10 Workpiece single crystal silicon 25 mm×10 mm×5 mm Grinding fluid water-based coolant 3　Experimental Results 3. 1 　Comparison of surf ace grinding temperature generated by straight wheel and cup wheel 　　Fig . 4 shows the real-recorded thermic voltage signal waveshape of the silicon wafer ground by a straight wheel (W10) . The grinding parameters are, grinding depth 3 um, table-speed 20 m/ min, plunge and dry grinding. The lasting time of the grinding thermic voltage wave varying from rapid ascending to desending gradually only lasts 0. 02 to 0.03s. This result indicates that the range of the high grinding temperature only last s a very short time on any point of the silicon wafer ground surface. T he rapid table-speed during the straight wheel grinding processes makes the grinding zone moving fast through the surface o f the workpiece. Little burn can be found on the workpiece surface. Fig. 4　Signal waveshape ground by a straight wheel 　　Fig. 5 show s the thermic voltage wave of the silicon wafer ground by a cup w heel (W28) . The grinding parameters are as follows: grinding depth is 10 um, tablespeed is 12 mm/ min, and coolant is engaged. Compared with Fig . 4, the thermic voltage signal wave lasts about 12. 5 s from ascending to descending. Obviously ,the lasting time of the high temperature in the cup wheel grinding process is as long as several hundred times compared with the straight wheel grinding process. The longer time the high temperature lasts, the more influence the workpiece qualities will suffer by heat . A complementary test , in which the conditions are similar to Fig. 4 but the coolant , presents further evidence to above opinions. Serious result s appeared: extreme high temperature, cracks o n the workpiece surface, and the scorch of the adhesive between the workpiece and its supporter . These experimental results suggest that the coolant is essential to the cup wheel grinding process, and some suitable methods, such as decreasing the width of the cup wheel, choosing a proper coolant and dressing w heel in time, should be adopted to reduce the generation of grinding heat . Fig. 5　Signal waveshape ground by a cup wheel 3. 2 　Experimental phenomena and analysis during straight wheel grinding process 　　The surface grinding temperature of spark-out grinding was tested to observe the laws of surface grinding temperature during the elastic recovery process of the grinding system in which the actual grinding depth decreases gradually to zero . During this grinding process, the material removal mechanism might change and there will have some influence on the surface grinding temperature. 　　Fig . 6 shows the relation between the surface grinding temperature and spark-out times. With the increase of spark-out times, surface grinding temperatures degrade step by step, finally to steady state. From the experiment result s, we have the following discussions. Fig. 6　Relation of surf ace grinding temperature and spark-out times 　　First , at the sixth spark-out grinding time, the surface grinding temperature increases abnormally. Similar test s w ere repeated three times to avoid possible errors. The tests present similar abnormal results at the same time. There may exist sever al factor s causing the results, such as the abnormal contact of thermocouple node, etc. We attribute the results to the change of material removal mechanism. When the actual grinding depth decreases with the spark-out grinding times, the material removal mechanism turns to ductile-mode from brittle-mode. In this process, the grinding force and temperature will have significant changes. The results also ex press that the ductile-mode grinding has not close relationship with grain-size. Proper conditions provided, a coarse grain size wheel can realize ductile-mode grinding , too . Because of the less number of grains around the coarse grain wheel periohery , the surface roughness ground by a coarse grain wheel is larger than that g round by a fine grain wheel . 　　Second, according to Fig . 6, surface grinding temperatures tend to have a steady value after the sixth spark-out grinding process. That is to say, maybe there is not any material being removed from the workpiece，s surface. Thus there exist s a limit time of silicon wafer spark-out grinding .It is useless beyond the limit . 　　Finally, after the sixth spar k-out grinding process, surface temperature also can be tested even if it is meaningless in fact . The tested temperatures keep constant on the whole even after the sixtieth spark-out grinding . The grinding thermic voltage curve measured is shown in Fig.7. Fig. 7　Signal waveshape after the sixth spark-out grinding 　　In contrast with Fig. 4, it is obvious that these two kinds of thermic voltage curve differ entirely . The fact that the thermic voltage curves change from one peak to multi-peaks ex presses that the grinding heat is generated by individual grains. Though, there is no actual grinding depth and no material removal, the wheel and workpiece contact anyway in the form of ploughing or scratching . There is still some energy transformed into grinding heat . In order to verify the assumption that each peak in the multi-peak curve results from the sing le grain grinding intercourse, the relationship between the number of peaks and workpiece tables-peed is observed, as shown in Fig. 8. Fig. 8　Relation between grain number and table speed 　　T he faster the tables-peed is , the fewer the peak number is. This is because the contact time between the w heel and the workpiece becomes shorter with the increase of table-speed, so , the number of grain engaged into grinding process decreases. The effective grain number can be measured through this method during the spark-out grinding process. 3. 3　Effect of grain size and grinding depth on surface grinding temperature 3. 3. 1　Surface grinding temperature caused by straight wheel 　　Fig . 9 shows the experimental relations between the surface grinding temperature of the silicon wafer and straight w heel grinding parameters that include grain size, grinding depth, up grinding and down grinding. The grinding wheel speed and the table-speed are kept constant , where the grinding wheel speed is 22. 8m/ s, table-speed is 8m/ min. From Fig . 9, we know that, at the same grinding depth, the surface grinding temperature ground by a fine g rain wheel is higher than that by a coarse g rain wheel, in which a similar relation in grinding force was observed by other scholars . Though the surface grinding temperature increases with the grinding depth increasing, the increasing rates are different with grain size. When the grinding depth is smaller than 0. 02 mm for a 240# wheel, the surface grinding temperature increases slowly. When the grinding depth is over 0. 03 mm, the surface grinding temperature increases abruptly and causes burn of the workpiece. As to a wheel o f grain sizeW10, the surface grinding temperature grows quickly at a grinding depth of 0. 005 mm, but , when the grinding depth is higher than 0. 01 mm, the grinding process is unsteady , the surface grinding temperature increases abruptly, and the workpiece burn is found. Fig. 9　Surface grinding temperature ground by straight wheel 3. 3. 2　Sur face grinding temperature caused by cup wheel 　　T he cup w heel speed and the workpiece feed speed are constant . Experimental conditions are listed in T ab. 2. The rotation speed of the cup wheel is 1 500r / min, the feed r ate of the workpiece is 12 mm/ min and the grinding depth ranges from 0. 001 mm to 0. 01mm. The experimental result s are show n in Fig . 10. In the same straight w heel grinding process, the surface grinding temperature ground by a fine grain w heel is obviously higher than that by a coarse grain w heel .Moreover , the coolant has critical influence on the cup wheel grinding process. Without a coolant , the grinding heat will remain and accumulate in the workpiece, and finally, cause the unstability of the grinding process and workpiece burn. Fig. 10　Surface grinding temperature ground by cup wheel 4.Conclusions 　　1) Ground by a cup w heel, the high temperature period lasts longer than that ground by a straight wheel. The coolant takes very important effect s to reduce the lasting time of high temperature. 　　2) For both straight wheel and cup w heel, the surface grinding temperature ground by fine grains is higher than that by coarse grains. 　　3) T he effective spark-out grinding times have a limit with a straight wheel . After the effective sparkout grinding times, there is some energy converted into grinding heat . T his process can last for a long time. 　　4) T he experimental setups and methods can reflect the effective numbers of g rains during the sparkout grinding process with a straight wheel. References [ 1] Jaeger J C. Moving sources of heat and the temperature at sliding contacts [ J ] . Proc Roy Soc of New South Wales ,1982, 76: 203. [ 2] Kenichiro Imai, Hiroshi Hashimoto. Some fundamental findings in ductile grinding various brittle materials[ C] . Proceedings of the ICPE，96 & 6th SJS SUT , 61～63. [ 3] Pang N, Zhou ZX, Zheng H W. T he study of plastic ultrasonic grinding machining process in silicon wafer [ C ] . Proceedings of the IC PE， 96 & 6th SJ SSUT , 83～86. [ 4] Zhan g C H, L in B. T he experiment al analysis of ELID grinding force in super -precision mirror finishing[ J] . Aviation Precision Manufacturing Technology , 1998, 34: 8～11. 磨削方式對(duì)單晶硅表面磨削溫度的影響 摘　要: 研究金剛石砂輪磨削單晶硅片時(shí)的表面磨削溫度. 針對(duì)平形砂輪和杯形砂輪兩種不同平面磨削方式所產(chǎn)生的表 面磨削溫度特點(diǎn)進(jìn)行了比較分析. 對(duì)砂輪粒度和磨削深度對(duì)這兩種平面磨削方式的表面磨削溫度的影響進(jìn)行了試驗(yàn)研究, 得到了一些有意義的試驗(yàn)結(jié)果和結(jié)論. 關(guān)鍵詞: 表面磨削溫度, 平形砂輪, 杯形砂輪, 單晶硅 在硅晶片加工技術(shù)已逐漸成為近幾年來(lái)大力發(fā)展的項(xiàng)目之一的今天，隨著大尺寸硅片生產(chǎn)成功，世界各地的研究者們?cè)趯?duì)硅片的加工技術(shù)發(fā)展?jié)摿Φ难芯糠矫娓冻隽烁嗟木? 根據(jù)韌性和脆性材料磨削的原則，在大尺寸硅片精密加工已經(jīng)取得了顯著的發(fā)展并獲得成功，方法就是通過(guò)采用杯形砂輪表面研磨技術(shù)，這是一個(gè)高效率的精密加工方法，并已廣泛應(yīng)用于對(duì)脆性材料加工領(lǐng)域。為防止硅片燒毀，表面磨削溫度的研究工作就顯得不可忽略。前人對(duì)表面磨削溫度研究的大部分主要是集中在圓盤砂輪加工工藝方面。對(duì)于這兩個(gè)不同的加工原則，有一些表面磨削溫度的區(qū)別，因此有必要了解杯形砂輪和圓盤砂輪磨削加工工藝不同的表面磨削溫度。與此同時(shí)，有關(guān)的研究工作對(duì)于杯形砂輪磨削技術(shù)的應(yīng)用是很有意義的。 1、杯形砂輪和圓盤砂輪表面磨削技術(shù)的比較 圖1顯示了圓盤砂輪表面磨削技術(shù)。車輪和工件之間的接觸長(zhǎng)度是與磨削深度、磨削方向和多變的研磨參數(shù)密切相關(guān),而且對(duì)磨削熱有著十分重要的影響。熱源強(qiáng)度會(huì)隨著接觸長(zhǎng)度的變化而變化。 圖2顯示了杯形砂輪表面磨削技術(shù)。車輪和工件之間的接觸長(zhǎng)度與磨削方向和磨削深度很少有關(guān)系。對(duì)于一個(gè)給定的砂輪, 在某一磨削深度范圍，接觸長(zhǎng)度保持常值。移動(dòng)熱源的原因被認(rèn)為是一種線性源基于傳統(tǒng)磨削熱理論,因而, 在其圓弧代替激光束的矩形磨削區(qū)域，這一理論不適合與杯形砂輪磨削加工。因此,杯形砂輪的磨削熱模型也應(yīng)建立起來(lái)以迎合這項(xiàng)新技術(shù)需要。 2.實(shí)驗(yàn)方法、儀器和條件 2.1實(shí)驗(yàn)方法 表面磨削溫度通過(guò)使用熱電偶測(cè)量。熱電偶由兩片薄0.1毫米厚度的標(biāo)準(zhǔn)熱電偶絲制成，并被夾在兩個(gè)工件中間，且與工件絕緣。當(dāng)砂輪研磨工件表面，兩片熱電偶在工件表面的終點(diǎn)可焊接在一起作為一個(gè)節(jié)點(diǎn)。由于這個(gè)節(jié)點(diǎn)體積小，熱容量足夠小。如果放大??和記錄儀器的反應(yīng)速度足夠快，那么響應(yīng)時(shí)間極短。真正的磨削溫度可以精確地測(cè)量計(jì)算不通過(guò)進(jìn)一步的演繹計(jì)算。 2.2儀器 圖3顯示了實(shí)驗(yàn)系統(tǒng)。工件的熱電偶導(dǎo)線連接直流放大器，使信號(hào)放大100--1 000倍。這些信號(hào)由一個(gè)數(shù)字實(shí)時(shí)示波器進(jìn)行分析，并由計(jì)算機(jī)記錄。那一刻執(zhí)行的磨削深度通過(guò)微進(jìn)給系統(tǒng)保持在每步1微米，微進(jìn)給系統(tǒng)是由我們自己的實(shí)驗(yàn)室制造的。進(jìn)給原理如圖3所示計(jì)算機(jī)提供精確的數(shù)字信號(hào)放大器。被放大的信號(hào)傳輸?shù)揭粋€(gè)壓電晶體進(jìn)行微進(jìn)給。 2.3實(shí)驗(yàn)條件 標(biāo)簽1顯示了圓盤砂輪的實(shí)驗(yàn)條件，而標(biāo)簽2杯形砂輪。 標(biāo)簽1設(shè)備及圓盤砂輪表面磨削參數(shù) 研磨機(jī) 赫茲- 63水平平面磨床 砂輪 樹(shù)脂結(jié)合劑金剛石外形：直板 Φ300毫米×25毫米240＃，W10 工件單 晶硅25毫米×10毫米×5毫米 磨削液 無(wú) 標(biāo)簽2設(shè)備及杯形砂輪表面磨削參數(shù) 車床 磨床CG6125A 砂輪 樹(shù)脂結(jié)合劑金剛石形狀：杯形 外徑 Φ100毫米 內(nèi)部直徑 Φ90毫米 磨料尺寸 120＃，W28，W10 工件 單晶硅25毫米×10毫米×5毫米 磨削液 水基冷卻液 3實(shí)驗(yàn)結(jié)果 3.1比較圓盤砂輪和杯型砂輪產(chǎn)生的表面磨削溫度 圖4顯示了實(shí)時(shí)記錄圓盤砂輪硅片電熱電壓信號(hào)的波形直輪（W10）。磨削參數(shù)，磨削深度3微米，工作臺(tái)速度20米/分，翻孔和干磨。該磨削電熱電壓脈沖，持續(xù)時(shí)間從快速上升到后來(lái)逐漸變?yōu)槌掷m(xù)0.02至0.03秒，這一結(jié)果表明，高磨削溫度變動(dòng)對(duì)任何硅片只持續(xù)相當(dāng)短的時(shí)間?？焖俚墓ぷ髋_(tái)使得圓盤磨削砂輪表面快速通過(guò)磨削工藝磨削區(qū)。細(xì)微的燒傷可在工件表面發(fā)現(xiàn)。 圖5顯示了硅晶片的電熱電壓信號(hào)波形是根據(jù)杯形砂輪確定的（W28）。磨削參數(shù)如下：磨削深度為10微米，工作臺(tái)進(jìn)給速度為12毫米/分鐘，冷卻液占線。相較于圖4，電熱電壓信號(hào)波形持續(xù)約12.5由上升至下降。顯然，在磨削過(guò)程中杯形砂輪高溫持續(xù)時(shí)間是一樣長(zhǎng)的圓盤砂輪的數(shù)百倍較.較長(zhǎng)時(shí)間的持續(xù)高溫，更會(huì)影響工件的質(zhì)量。一個(gè)互補(bǔ)實(shí)驗(yàn)，其中條件類似圖4，除了冷卻液，從而進(jìn)一步來(lái)證明上述結(jié)論。嚴(yán)重的結(jié)果出現(xiàn)了：極端高溫，工件表面的裂縫，和工件與支撐之間的膠粘劑燒焦。這些實(shí)驗(yàn)結(jié)果表明，冷卻液是必不可少在杯形砂輪磨削過(guò)程中，應(yīng)采取一些適當(dāng)?shù)姆椒?，如降低杯子的輪寬，選擇一個(gè)合適的冷卻液和砂輪修整的時(shí)間，以減少磨削熱的產(chǎn)生。 3.2圓盤砂輪在磨削過(guò)程中的實(shí)驗(yàn)現(xiàn)象和分析 表面磨削火花磨削溫度進(jìn)行了測(cè)試，觀察期間的粉磨系統(tǒng)中的實(shí)際磨削深度逐漸減小到零彈性恢復(fù)過(guò)程中表面磨削溫度的法律。在此研磨過(guò)程中，材料去除機(jī)理可能會(huì)有變化，有一些表面上的磨削溫度的影響。 圖6顯示了磨削溫度，引發(fā)出次表面的關(guān)系。隨著出火花次數(shù)的增加，表面磨削溫度一步一步分解，最后到穩(wěn)定狀態(tài)。從實(shí)驗(yàn)結(jié)果，我們有下面的討論。 首先，在第六次出火花的研磨時(shí)間，表面磨削溫度升高異常。類似的測(cè)試重復(fù)3次，以避免可能的錯(cuò)誤。目前的測(cè)試顯示在同一時(shí)間出現(xiàn)相近異常的結(jié)果。這可能由于一些因素，如熱電偶節(jié)點(diǎn)異常接觸造成的結(jié)果等等，我們將結(jié)果歸結(jié)于材料去除機(jī)理的變化。當(dāng)實(shí)際的火花磨削深度隨著磨削次數(shù)減小，材料去除機(jī)理由韌性模式轉(zhuǎn)向脆性模式。在這個(gè)過(guò)程中，磨削力和溫度將有重大變化。研究結(jié)果還表示，該韌性模式已經(jīng)與磨粒度沒(méi)有密切關(guān)系。另外提供適當(dāng)?shù)臈l件，粗晶粒尺寸砂輪也可以實(shí)現(xiàn)韌性模式研磨。由于粗磨輪周圍的磨粒比較少，所以使得粗磨輪表面的粗糙度比細(xì)磨粒的粗糙度大。 其次，根據(jù)圖6，表面磨削溫度往往在第六個(gè)火花磨削加工后出現(xiàn)穩(wěn)定值。這就是說(shuō)，也許沒(méi)有任何從工件表面被刪除的材料。因此，存在一個(gè)時(shí)間限制火花硅片出磨。它是超過(guò)極限的，是無(wú)用的。 最后，在第六次出火花的磨削工藝中，表面溫度也可以進(jìn)行測(cè)試，即使它實(shí)際上是毫無(wú)意義的。經(jīng)測(cè)試溫度保持不變，甚至對(duì)整個(gè)第六十次出火花磨削。研磨電熱電壓曲線測(cè)量圖如圖7所示。 與圖4的對(duì)比，顯然，電熱電壓曲線這兩種完全不同的。這一事實(shí)從一個(gè)放熱峰的電壓變化曲線為多峰表示，該磨削熱是由單個(gè)顆粒產(chǎn)生。雖然，沒(méi)有實(shí)際磨削深度，沒(méi)有材料去除，砂輪和工件接觸正在刨傷或刮傷的形式。還有磨削熱轉(zhuǎn)化成一定的能量。為了驗(yàn)證中的每個(gè)從單一的磨性多峰曲線結(jié)果高峰期，高峰之間的數(shù)量關(guān)系和工件工作臺(tái)進(jìn)給速度觀察的假設(shè)，如圖8所示。 進(jìn)給速度越快，則波峰數(shù)目越少。這是因?yàn)樯拜喤c工件之間的接觸時(shí)間會(huì)隨著進(jìn)給速度增加而減少，所以，磨粒數(shù)導(dǎo)致研磨過(guò)程變短。有效磨粒數(shù)可以通過(guò)此方法可在火花磨削工藝中進(jìn)行測(cè)量。 3．3磨削粒度和磨削深度對(duì)表面磨削溫度的影響 3.3.1表面磨削溫度由圓盤砂輪造成 圖9顯示了表面磨削溫度的硅晶片和磨削參數(shù)，包括晶粒尺寸，磨削深度，降低了磨磨直輪實(shí)驗(yàn)的關(guān)系。砂輪速度和進(jìn)給速度依然能保持恒定，那里的砂輪速度為22.8米/秒，進(jìn)給速度是8m/分鐘。從圖9在相同的磨削深度，表面研磨輪由細(xì)晶溫度高于地面是由粗磨輪，其中在磨削力的相似關(guān)系是由其他學(xué)者觀察。雖然磨床磨削深度增加溫度升高面，提高率與顆粒大小不同。當(dāng)磨削深度小于0.02毫米為240＃砂輪，磨削表面溫度上升緩慢。當(dāng)磨削深度超過(guò)0.03毫米，表面 磨削溫度急劇增加，導(dǎo)致燒傷的工件。作為一個(gè)磨（W10）輪，表面磨削溫度迅速增長(zhǎng)在磨削深度為0.005毫米，但是，當(dāng)磨削深度為大于0.01毫米，研磨過(guò)程是不穩(wěn)定的，表面磨削溫度急劇增加，和工件燒傷被發(fā)現(xiàn)。 3.3.2由杯形砂輪引起的表面磨削溫度 杯形砂輪速度和工件進(jìn)給速度是恒定的。實(shí)驗(yàn)條件列于標(biāo)簽2。杯形砂輪的轉(zhuǎn)速為1500r/ min時(shí)，工件進(jìn)給速度為12毫米/分鐘，磨削深度變動(dòng)范圍為從0.001毫米為0.01毫米。實(shí)驗(yàn)結(jié)果顯示在圖10中。在同樣的圓盤砂輪磨削工藝過(guò)程中，磨削表面由細(xì)粒組成磨輪的溫度明顯高于由粗磨粒組成的磨輪。此外，冷卻液對(duì)杯形砂輪在磨削過(guò)程中有著至關(guān)重要的影響。沒(méi)有冷卻液，磨削熱將依然存在，并且在工件上積累，最后導(dǎo)致磨削過(guò)程的不穩(wěn)定性和工件燒傷。 4.結(jié)論 1）由杯形砂輪磨削高溫持續(xù)時(shí)間比圓盤砂輪磨削更長(zhǎng)。冷卻液在減少高溫持續(xù)時(shí)間方面具有非常重要的作用。 2）無(wú)論圓盤砂輪還是杯形砂輪，磨削面細(xì)顆粒溫度比磨削面粗顆粒高。 3）有效的火花研磨次數(shù)對(duì)于圓盤砂輪有一定限制。在有效的火花研磨次數(shù)之后，有一定的能量轉(zhuǎn)換成磨削熱，這個(gè)過(guò)程可以持續(xù)很長(zhǎng)時(shí)間。 4）這個(gè)實(shí)驗(yàn)裝置和方法可以反映在與圓盤砂輪火花磨削過(guò)程中的有效的磨粒數(shù)量。